Art
J-GLOBAL ID：200902059585547405   Reference number：85A0473476

Hydrogen localization near boron in silicon.

シリコン中のほう素付近への水素の局在化
Author (4)：
PANKOVE J I

About PANKOVE J I

(RCA, New Jersey)

About RCA, New Jersey

, 
ZANZUCCHI P J

About ZANZUCCHI P J

(RCA, New Jersey)

About RCA, New Jersey

, 
MAGEE C W

About MAGEE C W

(RCA, New Jersey)

About RCA, New Jersey

, 
LUCOVSKY G

About LUCOVSKY G

(North Carolina State Univ.)

About North Carolina State Univ.


Material：
Applied Physics Letters  (Appl Phys Lett)

About Applied Physics Letters


Volume： 46  Issue： 4  Page： 421-423  Publication year： Feb. 15, 1985 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
silicon

About silicon

,...
   To see more with JDream III (charged).   {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=85A0473476&from=J-GLOBAL&jstjournalNo=H0613A") }}
JST classification (1)：
JST classification
Category name(code) classified by JST.
Lattice defects in semiconductors 
(BK12040Q)

About Lattice defects in semiconductors

Terms in the title (4)：
Terms in the title
Keywords automatically extracted from the title.
シリコン

About シリコン

, 
ほう素

About ほう素

, 
水素

About 水素

, 
局在化

About 局在化


Return to Previous Page

TOP

BOTTOM