Art
J-GLOBAL ID：200902061586943597   Reference number：86A0309960

A metal-insulator-semiconductor (MIS) device using a ferroelectric polymer thin film in the gate insulator.

強誘電性高分子薄膜をゲート絶縁体に使用した金属-絶縁体-半導体(MIS)素子
Author (1)：
YAMAUCHI N

About YAMAUCHI N

(Electrical Communications Lab., Tokai-mura)

About Electrical Communications Lab., Tokai-mura


Material：
Japanese Journal of Applied Physics. Part 1. Regular Papers, Short Notes & Review Papers  (Japanese Journal of Applied Physics. Part 1. Regular Papers, Brief Communications & Review Papers)

About Japanese Journal of Applied Physics. Part 1. Regular Papers, Short Notes & Review Papers


Volume： 25  Issue： 4  Page： 590-594  Publication year： Apr. 1986 
JST Material Number： G0520B  ISSN： 0021-4922  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： ENGLISH (EN)
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polyvinylidene fluoride

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,...
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Thesaurus term/Semi thesaurus term
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polyhalogenated compound

About polyhalogenated compound

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JST classification (2)：
JST classification
Category name(code) classified by JST.
金属-絶縁体-半導体構造【’81~’92】 
(BM03074V)

About 金属-絶縁体-半導体構造【’81~’92】

,  Transistors 
(NC03070N)

About Transistors

Terms in the title (5)：
Terms in the title
Keywords automatically extracted from the title.
強誘電性

About 強誘電性

, 
高分子薄膜

About 高分子薄膜

, 
ゲート絶縁体

About ゲート絶縁体

, 
絶縁体

About 絶縁体

, 
MIS

About MIS


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