Art
J-GLOBAL ID：200902063212708333   Reference number：86A0460450

Surface damage on GaAs induced by reactive ion etching and sputter etching.

反応性イオンエッチングおよびスパッタエッチングによるGaAsの表面損傷
Author (1)：
PANG S W

About PANG S W

(Massachusetts Inst. Technology)

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Material：
Journal of the Electrochemical Society  (J Electrochem Soc)

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Volume： 133  Issue： 4  Page： 784-787  Publication year： Apr. 1986 
JST Material Number： C0285A  ISSN： 1945-7111  CODEN： JESOAN  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)
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micro circuit technique

About micro circuit technique

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polyhalogenated compound

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JST classification (1)：
JST classification
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Manufacturing technology of solid-state devices 
(NC03030V)

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Terms in the title (4)：
Terms in the title
Keywords automatically extracted from the title.
反応性イオンエッチング

About 反応性イオンエッチング

, 
スパッタエッチング

About スパッタエッチング

, 
GaAs

About GaAs

, 
表面損傷

About 表面損傷


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