Art
J-GLOBAL ID：200902064088196724   Reference number：87A0011633

Characteristics of the epitaxial semiconductor Raman laser.

エピタキシャル半導体Ramanレーザの特性
Author (2)：
SUTO K

About SUTO K

(Tohoku Univ., Sendai, JPN)

About Tohoku Univ., Sendai, JPN

, 
NISHIZAWA J

About NISHIZAWA J

(Tohoku Univ., Sendai, JPN)

About Tohoku Univ., Sendai, JPN


Material：
IEE Proceedings. Part J. Optoelectronics  (IEE Proc Part J)

About IEE Proceedings. Part J. Optoelectronics


Volume： 133  Issue： 4  Page： 259-263  Publication year： Aug. 1986 
JST Material Number： B0058D  ISSN： 0267-3932  CODEN： IPJOEE  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)
Thesaurus term：
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semiconductor laser

About semiconductor laser

,...
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JST classification (1)：
JST classification
Category name(code) classified by JST.
Semiconductor lasers 
(BD04070L)

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Terms in the title (2)：
Terms in the title
Keywords automatically extracted from the title.
エピタキシャル

About エピタキシャル

, 
Ramanレーザ

About Ramanレーザ


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