Influence of the isoelectronic dopants and of the excitation rate on the photoluminescence of GaP:(N, Bi).

JIANG B; LIU X; LIN X; WANG N; CHEN J; YANG S; YIE L

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J-GLOBAL ID：200902064812386123 Reference number：89A0123095

Influence of the isoelectronic dopants and of the excitation rate on the photoluminescence of GaP:(N, Bi).

GaP:(N,Bi)の光ルミネセンスにおよぼす等電子ドーバンドと励起速度の影響

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Material：
Volume： 68 Issue： 9 Page： 853-858 Publication year： Dec. 1988
JST Material Number： H0499A ISSN： 0038-1098 Document type： Article
Article type：短報 Country of issue： United Kingdom (GBR) Language： ENGLISH (EN)

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Luminescence of semiconductors

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