Art
J-GLOBAL ID：200902065431489569   Reference number：91A0879450

High-Gain Lateral Bipolar Action in a MOSFET Structure.

MOSFET構造の高利得横方向バイポーラ動作
Author (4)：
VERDONCKT-VANDEBROEK S

About VERDONCKT-VANDEBROEK S

(Cornell Univ., NY)

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, 
WONG S S

About WONG S S

(Stanford Univ., CA)

About Stanford Univ., CA

, 
WOO J C S

About WOO J C S

(Univ. California, Lon Angeles, CA)

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, 
KO P K

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(Univ. California, Berkeley, CA)

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Material：
IEEE Transactions on Electron Devices  (IEEE Trans Electron Devices)

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Volume： 38  Issue： 11  Page： 2487-2496  Publication year： Nov. 1991 
JST Material Number： C0222A  ISSN： 0018-9383  CODEN： IETDAI  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)
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MOSFET

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,...
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JST classification (1)：
JST classification
Category name(code) classified by JST.
Transistors 
(NC03070N)

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Terms in the title (4)：
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MOSFET

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, 
高利得

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, 
横方向

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, 
バイポーラ

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