Relaxation Process of the Thermal Strain in the GaN/α-Al<sub>2</sub>O<sub>3</sub> Heterostructure and Determination of the Intrinsic Lattice Constants of GaN Free from the Strain.

DETCHPROHM T; HIRAMATSU K; ITOH K; AKASAKI I

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J-GLOBAL ID：200902069149669770 Reference number：92A0807076

Relaxation Process of the Thermal Strain in the GaN/α-Al₂O₃ Heterostructure and Determination of the Intrinsic Lattice Constants of GaN Free from the Strain.

GaN/α-Al₂O₃ヘテロ構造における熱歪の緩和過程と歪のないGaNの固有格子定数の決定

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Volume： 31 Issue： 10B Page： L1454-1456 Publication year： Oct. 15, 1992
JST Material Number： F0599B ISSN： 0021-4922 Document type： Article
Article type：短報 Country of issue： Japan (JPN) Language： ENGLISH (EN)

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Semiconductor thin films

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Relaxation Process of the Thermal Strain in the GaN/α-Al2O3 Heterostructure and Determination of the Intrinsic Lattice Constants of GaN Free from the Strain.

Relaxation Process of the Thermal Strain in the GaN/α-Al₂O₃ Heterostructure and Determination of the Intrinsic Lattice Constants of GaN Free from the Strain.