Art
J-GLOBAL ID：200902070149168230   Reference number：82A0054816

Ion implantation and low-temperature epitaxial regrowth of GaAs.

GaAsのイオン注入と低温エピタキシャル再成長
Author (4)：
GRIMALDI M G

About GRIMALDI M G

(California Inst. Technology)

About California Inst. Technology

, 
PAINE B M

About PAINE B M

(California Inst. Technology)

About California Inst. Technology

, 
NICOLET M-A

About NICOLET M-A

(California Inst. Technology)

About California Inst. Technology

, 
SADANA D K

About SADANA D K

(Univ. California)

About Univ. California


Material：
Journal of Applied Physics  (Journal of General Physics and its Application to Other Sciences and to Industry)

About Journal of Applied Physics


Volume： 52  Issue： 6  Page： 4038-4046  Publication year： Jun. 1981 
JST Material Number： C0266A  ISSN： 0021-8979  CODEN： JAPIAU  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
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gallium arsenide

About gallium arsenide

,...
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JST classification (2)：
JST classification
Category name(code) classified by JST.
Irradiational changes semiconductors 
(BK16123E)

About Irradiational changes semiconductors

,  Crystal growth of semiconductors 
(BK13040X)

About Crystal growth of semiconductors

Terms in the title (5)：
Terms in the title
Keywords automatically extracted from the title.
GaAs

About GaAs

, 
イオン注入

About イオン注入

, 
低温

About 低温

, 
エピタキシャル

About エピタキシャル

, 
再成長

About 再成長


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