Art
J-GLOBAL ID：200902073010729431   Reference number：85A0034396

Doping of germanium, antimony and tungsten atoms into silicon substrate by high energy electron.

高エネルギー電子線によるSi基板へのGe,Sb及びW不純物原子のドーピング
Author (4)：
TAKEDA MICHIHIKO

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(名古屋工技試)

About 名古屋工技試

, 
WADA TAKAO

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(三重大工)

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, 
MASUDA HARUHO

About MASUDA HARUHO

(名古屋工技試)

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, 
YASUDA KYOICHIRO

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(名古屋工技試)

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Material：
名古屋工業技術試験所報告  (Reports of the Government Industrial Research Institute, Nagoya)

About 名古屋工業技術試験所報告


Volume： 33  Issue： 4  Page： 117-124  Publication year： Apr. 1984 
JST Material Number： F0514A  ISSN： 0027-7614  CODEN： NAGHA  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： JAPANESE (JA)
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silicon

About silicon

,...
Semi thesaurus term：
Thesaurus term/Semi thesaurus term
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All keywords is available on JDreamIII(charged).
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SIMS

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,...
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JST classification (1)：
JST classification
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Lattice defects in semiconductors 
(BK12040Q)

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Terms in the title (6)：
Terms in the title
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高エネルギー電子

About 高エネルギー電子

, 
Si基板

About Si基板

, 
Ge

About Ge

, 
Sb

About Sb

, 
不純物原子

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, 
ドーピング

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