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J-GLOBAL ID：200902076579503430   Reference number：89A0358299

Transformations on clean Si(111) stepped surface during sublimation.

清浄なSi(111)ステップ表面の昇華中の構造変化
Author (4)：
LATYSHEV A V

About LATYSHEV A V

(Inst. Semiconductor Physics, USSR Academy of Sciences, Novosibirsk, SUN)

About Inst. Semiconductor Physics, USSR Academy of Sciences, Novosibirsk, SUN

, 
ASEEV A L

About ASEEV A L

(Inst. Semiconductor Physics, USSR Academy of Sciences, Novosibirsk, SUN)

About Inst. Semiconductor Physics, USSR Academy of Sciences, Novosibirsk, SUN

, 
KRASILNIKOV A B

About KRASILNIKOV A B

(Inst. Semiconductor Physics, USSR Academy of Sciences, Novosibirsk, SUN)

About Inst. Semiconductor Physics, USSR Academy of Sciences, Novosibirsk, SUN

, 
STENIN S I

About STENIN S I

(Inst. Semiconductor Physics, USSR Academy of Sciences, Novosibirsk, SUN)

About Inst. Semiconductor Physics, USSR Academy of Sciences, Novosibirsk, SUN


Material：
Surface Science  (Surface Science Letters)

About Surface Science


Volume： 213  Issue： 1  Page： 157-169  Publication year： Apr. 1989 
JST Material Number： C0129B  ISSN： 0039-6028  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)
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silicon

About silicon

,...
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Thesaurus term/Semi thesaurus term
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reflection electron microscope

About reflection electron microscope

,...
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JST classification (1)：
JST classification
Category name(code) classified by JST.
Surface structure of semiconductors 
(BK15030A)

About Surface structure of semiconductors

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Si

About Si

, 
昇華

About 昇華


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