Art
J-GLOBAL ID：200902076897897472   Reference number：84A0382295

Device design for the submicrometer p-channel FET with n+ polysilicon gate.

n+ポリシリコンゲートをもつサブミクロンメータpチャネルFETの素子設計
Author (2)：
CHAM K M

About CHAM K M

(Hewlett-Packard, CA)

About Hewlett-Packard, CA

, 
CHIANG S-YI

About CHIANG S-YI

(Hewlett-Packard, CA)

About Hewlett-Packard, CA


Material：
IEEE Transactions on Electron Devices  (IEEE Trans Electron Devices)

About IEEE Transactions on Electron Devices


Volume： 31  Issue： 7  Page： 964-968  Publication year： Jul. 1984 
JST Material Number： C0222A  ISSN： 0018-9383  CODEN： IETDAI  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)
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polycrystal

About polycrystal

,...
Semi thesaurus term：
Thesaurus term/Semi thesaurus term
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device design

About device design


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JST classification (1)：
JST classification
Category name(code) classified by JST.
Transistors 
(NC03070N)

About Transistors

Terms in the title (5)：
Terms in the title
Keywords automatically extracted from the title.
ポリシリコン

About ポリシリコン

, 
ゲート

About ゲート

, 
チャネル

About チャネル

, 
FET

About FET

, 
素子設計

About 素子設計


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