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J-GLOBAL ID:200902079238267800   Reference number:86A0501334

GexSi1-x strained-layer superlattice waveguide photodetectors operating near 1.3 μm.

GexS1-xひずみ入り超格子導波路型光検出器の1.3μm近傍での受光特性
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Volume: 48  Issue: 15  Page: 963-965  Publication year: Apr. 14, 1986 
JST Material Number: H0613A  ISSN: 0003-6951  CODEN: APPLAB  Document type: Article
Article type: 短報  Country of issue: United States (USA)  Language: ENGLISH (EN)
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Photometry and photodetectors in general  ,  半導体-半導体接触【’81~’92】 
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