Art
J-GLOBAL ID：200902081035732618   Reference number：88A0067368

Efficient numerical simulation of the high-frequency MOS capacitance.

高周波MOS容量の効果的な数値シミュレーション
Author (2)：
WATT J T

About WATT J T

(Stanford Univ., CA, USA)

About Stanford Univ., CA, USA

, 
PLUMMER J D

About PLUMMER J D

(Stanford Univ., CA, USA)

About Stanford Univ., CA, USA


Material：
IEEE Transactions on Electron Devices  (IEEE Trans Electron Devices)

About IEEE Transactions on Electron Devices


Volume： 34  Issue： 10  Page： 2214-2216  Publication year： Oct. 1987 
JST Material Number： C0222A  ISSN： 0018-9383  CODEN： IETDAI  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
HF

About HF

,...
   To see more with JDream III (charged).   {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=88A0067368&from=J-GLOBAL&jstjournalNo=C0222A") }}
JST classification (1)：
JST classification
Category name(code) classified by JST.
金属-絶縁体-半導体構造【’81~’92】 
(BM03074V)

About 金属-絶縁体-半導体構造【’81~’92】

Terms in the title (3)：
Terms in the title
Keywords automatically extracted from the title.
高周波

About 高周波

, 
MOS

About MOS

, 
数値シミュレーション

About 数値シミュレーション


Return to Previous Page

TOP

BOTTOM