Art
J-GLOBAL ID：200902086423250988   Reference number：90A0157298

Enhancement in thermal oxidation of silicon by ozone.

シリコン熱酸化のオゾンによる増強
Author (3)：
CHAO S C

About CHAO S C

(Drexel Univ., Pennsylvania)

About Drexel Univ., Pennsylvania

, 
PITCHAI R

About PITCHAI R

(Drexel Univ., Pennsylvania)

About Drexel Univ., Pennsylvania

, 
LEE Y H

About LEE Y H

(Drexel Univ., Pennsylvania)

About Drexel Univ., Pennsylvania


Material：
Journal of the Electrochemical Society  (J Electrochem Soc)

About Journal of the Electrochemical Society


Volume： 136  Issue： 9  Page： 2751-2752  Publication year： Sep. 1989 
JST Material Number： C0285A  ISSN： 1945-7111  CODEN： JESOAN  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
silicon

About silicon

,...
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JST classification (2)：
JST classification
Category name(code) classified by JST.
Oxide thin films 
(BK14050P)

About Oxide thin films

,  Manufacturing technology of solid-state devices 
(NC03030V)

About Manufacturing technology of solid-state devices

Terms in the title (4)：
Terms in the title
Keywords automatically extracted from the title.
シリコン

About シリコン

, 
熱酸化

About 熱酸化

, 
オゾン

About オゾン

, 
増強

About 増強


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