Art
J-GLOBAL ID：200902087459242392   Reference number：85A0460981

Quantum yield of electron impact ionization in silicon.

シリコンにおける電子衝突イオン化の量子収量
Author (3)：
CHANG C

About CHANG C

(Univ. California)

About Univ. California

, 
HU C

About HU C

(Univ. California)

About Univ. California

, 
BRODERSEN R W

About BRODERSEN R W

(Univ. California)

About Univ. California


Material：
Journal of Applied Physics  (Journal of General Physics and its Application to Other Sciences and to Industry)

About Journal of Applied Physics


Volume： 57  Issue： 2  Page： 302-309  Publication year： Jan. 15, 1985 
JST Material Number： C0266A  ISSN： 0021-8979  CODEN： JAPIAU  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
silicon

About silicon

,...
   To see more with JDream III (charged).   {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=85A0460981&from=J-GLOBAL&jstjournalNo=C0266A") }}
JST classification (1)：
JST classification
Category name(code) classified by JST.
金属-絶縁体-半導体構造【’81~’92】 
(BM03074V)

About 金属-絶縁体-半導体構造【’81~’92】

Terms in the title (3)：
Terms in the title
Keywords automatically extracted from the title.
シリコン

About シリコン

, 
電子衝突イオン化

About 電子衝突イオン化

, 
量子収量

About 量子収量


Return to Previous Page

TOP

BOTTOM