Determination of the charge carrier concentration and mobility in n-GaP by Raman spectroscopy.

IRMER G; TOPOROV V V; BAIRAMOV B H; MONECKE J

Art

J-GLOBAL ID：200902092788424110 Reference number：84A0081169

Determination of the charge carrier concentration and mobility in n-GaP by Raman spectroscopy.

n-GaPでの電荷キャリア密度と移動度のRaman分光による決定

Publisher site Copy service {{ this.onShowCLink("http://jdream3.com/copy/?sid=JGLOBAL&noSystem=1&documentNoArray=84A0081169&COPY=1") }}
Access JDreamⅢ for advanced search and analysis. {{ this.onShowJLink("http://jdream3.com/lp/jglobal/index.html?docNo=84A0081169&from=J-GLOBAL&jstjournalNo=C0599A") }}

Author (4)： , , ,
Material：
Volume： 119 Issue： 2 Page： 595-603 Publication year： Oct. 1983
JST Material Number： C0599A ISSN： 0370-1972 Document type： Article
Article type：原著論文 Country of issue： Germany, Federal Republic of (DEU) Language： ENGLISH (EN)

,...

To see more with JDream III (charged). {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=84A0081169&from=J-GLOBAL&jstjournalNo=C0599A") }}

Electric conduction in crystalline semiconductors , Infrared spectra,Raman scattering and Raman spectra of inorganic compounds

, , , ,

Return to Previous Page