Art

J-GLOBAL ID：200902095107410107   Reference number：88A0101276

Growth of GaAs layers on (001) Si substrates.

(001)Si基板上へのGaAs層の形成

Author (6)： NARITSUKA S (Toshiba Corp., Kawasaki, JPN) ,  NOZAKI C (Toshiba Corp., Kawasaki, JPN) ,  SUGIYAMA N (Toshiba Corp., Kawasaki, JPN) ,  NISHIKAWA Y (Toshiba Corp., Kawasaki, JPN) ,  YASUAMI S (Toshiba Corp., Kawasaki, JPN) ,  KOKUBUN Y (Toshiba Corp., Kawasaki, JPN)
Material： Extended Abstracts of the 19th Conference on Solid State Devices and Materials, 1987  (Ext Abstr 19th Conf Solid State Devices Mater 1987)
Page： 143-146  Publication year： 1987 
JST Material Number： K19870562  ISBN： 4-930813-21-2  Document type： Proceedings
Article type： 短報  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： silicon ,...

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JST classification (1)： Manufacturing technology of solid-state devices  (NC03030V)

Terms in the title (2)： Si基板 ,  GaAs