Hole transport theory in pseudomorphic Si<sub>1-x</sub>Ge<sub>x</sub> alloys grown on Si(001) substrates.

HINCKLEY J M; SINGH J

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J-GLOBAL ID：200902095393937877 Reference number：90A0324194

Hole transport theory in pseudomorphic Si_1-xGe_x alloys grown on Si(001) substrates.

Si(001)基板上に成長させた仮像Si_1-xGe_xアロイにおける正孔の輸送理論

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Volume： 41 Issue： 5 Page： 2912-2926 Publication year： Feb. 15, 1990
JST Material Number： D0746A ISSN： 1098-0121 CODEN： PRBMDO Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

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Electric conduction in semiconductors and insulators in general , 半導体-半導体接触【’81~’92】

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Hole transport theory in pseudomorphic Si1-xGex alloys grown on Si(001) substrates.

Hole transport theory in pseudomorphic Si_1-xGe_x alloys grown on Si(001) substrates.