Effects of reactive ion beam treatment of a sapphire surface to optimite the deposition of GaN films.

KIM H-J; BYUN D; KIM G; KUM D-W

Art

J-GLOBAL ID：200902100705414773 Reference number：00A0624419

Effects of reactive ion beam treatment of a sapphire surface to optimite the deposition of GaN films.

GaN薄膜の堆積を最適化するためのサファイア表面の反応性イオンビーム処理の効果

Publisher site Copy service {{ this.onShowCLink("http://jdream3.com/copy/?sid=JGLOBAL&noSystem=1&documentNoArray=00A0624419&COPY=1") }}
Access JDreamⅢ for advanced search and analysis. {{ this.onShowJLink("http://jdream3.com/lp/jglobal/index.html?docNo=00A0624419&from=J-GLOBAL&jstjournalNo=C0266A") }}

Author (4)： , , ,
Material：
Volume： 87 Issue： 11 Page： 7940-7945 Publication year： Jun. 01, 2000
JST Material Number： C0266A ISSN： 0021-8979 CODEN： JAPIAU Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

,...

To see more with JDream III (charged). {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=00A0624419&from=J-GLOBAL&jstjournalNo=C0266A") }}

Semiconductor thin films , Irradiational changes of other materials

, , , , , ,

Return to Previous Page