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J-GLOBAL ID:200902102143421162   Reference number:97A0730370

Formation mechanism of ultrathin WSiN barrier layer in a W/WNx/Si system.

W/WNx/Si系における超薄WSiN障壁層の形成機構
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Volume: 117/118  Page: 312-316  Publication year: Jun. 1997 
JST Material Number: B0707B  ISSN: 0169-4332  Document type: Article
Article type: 原著論文  Country of issue: Netherlands (NLD)  Language: ENGLISH (EN)
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Metallic thin films  ,  Semiconductor integrated circuit 
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