Gas response dependence on gate metal morphology of field-effect devices.

LOEFDAHL M; UTAIWASIN C; CARLSSON A; LUNDSTROEM I; ERIKSSON M

Art

J-GLOBAL ID：200902102214715766 Reference number：02A0044593

Gas response dependence on gate metal morphology of field-effect devices.

電界効果素子のゲート金属モルホロジーに対するガス応答依存性

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Author (5)： , , , ,
Material：
Volume： B80 Issue： 3 Page： 183-192 Publication year： Dec. 01, 2001
JST Material Number： T0967A ISSN： 0925-4005 Document type： Article
Article type：原著論文 Country of issue： Netherlands (NLD) Language： ENGLISH (EN)

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Analytical instruments , Transistors

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