Auger investigation of group III nitride films grown by molecular beam epitaxy.

NOVIKOV S V; FOXON C T; CHENG T S; TANSLEY T L; ORTON J W; LACKLISON D E; JOHNSTON D; BABA-ALI N; EAVES L

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J-GLOBAL ID：200902102755349177 Reference number：95A0215059

Auger investigation of group III nitride films grown by molecular beam epitaxy.

分子ビームエピタクシーにより成長させたIII族窒化物膜のAuger研究

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Material：
Volume： 146 Issue： 1/4 Page： 340-343 Publication year： Jan. 1995
JST Material Number： B0942A ISSN： 0022-0248 Document type： Article
Article type：原著論文 Country of issue： Netherlands (NLD) Language： ENGLISH (EN)

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Semiconductor thin films

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