Breakdown-induced negative charge in ultrathin SiO<sub>2</sub> films measured by atomic force microscopy.

PORTI M; NAFRIA M; BLUEM M C; AYMERICH X; SADEWASSER S

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J-GLOBAL ID：200902103441782204 Reference number：02A0889917

Breakdown-induced negative charge in ultrathin SiO₂ films measured by atomic force microscopy.

原子間力顕微鏡で測定したSiO₂超薄膜の破壊誘起負電荷

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Volume： 81 Issue： 19 Page： 3615-3617 Publication year： Nov. 04, 2002
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Breakdown-induced negative charge in ultrathin SiO2 films measured by atomic force microscopy.

Breakdown-induced negative charge in ultrathin SiO₂ films measured by atomic force microscopy.