A preliminary study of MIS diodes with nm-thin GaAs-oxide layers.

SUGIMURA T; TSUZUKU T; KATSUI T; KASAI Y; INOKUMA T; HASHIMOTO S; IIYAMA K; TAKAMIYA S

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J-GLOBAL ID：200902105161809363 Reference number：99A0888360

A preliminary study of MIS diodes with nm-thin GaAs-oxide layers.

nm厚GaAs-酸化膜層を持つMISダイオードの予備研究

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Material：
Volume： 43 Issue： 8 Page： 1571-1576 Publication year： Aug. 1999
JST Material Number： H0225A ISSN： 0038-1101 Document type： Article
Article type：原著論文 Country of issue： United Kingdom (GBR) Language： ENGLISH (EN)

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Diodes

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