Dependence of SiC Blue Light-Emitting Diode Efficiency on the p-Type Layer Growth Temperature.

MATSUSHITA Y; UETANI T; KUNISATO T; SUZUKI J; UEDA Y; YAGI K; YAMAGUCHI T; NIINA T

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J-GLOBAL ID：200902106774486970 Reference number：95A0459744

Dependence of SiC Blue Light-Emitting Diode Efficiency on the p-Type Layer Growth Temperature.

SiCの青色発光ダイオード効率のp型層成長温度依存性

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Author (8)： , , , , , , ,
Material：
Volume： 34 Issue： 4A Page： 1833-1834 Publication year： Apr. 1995
JST Material Number： G0520B ISSN： 0021-4922 Document type： Article
Article type：短報 Country of issue： Japan (JPN) Language： ENGLISH (EN)

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Light emitting devices , Semiconductor thin films , Semiconductor-semiconductor contacts without Gr.13-15 element compounds

Reference (4)：

MATSUSHITA, Y. Ext. Abstr.52nd Autumn Meet. Japan Society of Applied Physics. 1991, 11a-SY20
MATSUSHITA, Y. Jpn. J. Appl. Phys. 1990, 29, L343
SUZUKI, A. J. Appl. Phys. 1976, 47, 4546
MATSUSHITA, Y. 11th Symp. Rec. Alloy Semiconductor Physics and Electronics. 1992, 133

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