Advanced Memory Devices Using High-ε and Ferroelectric Films. Study of Ferroelectric Materials for Ferroelectric Memory FET.

FUJIMORI Y; IZUMI N; NAKAMURA T; KAMISAWA A

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J-GLOBAL ID：200902106812169542 Reference number：98A0479630

Advanced Memory Devices Using High-ε and Ferroelectric Films. Study of Ferroelectric Materials for Ferroelectric Memory FET.

強誘電体メモリFETのための強誘電体材料の研究

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Volume： E81-C Issue： 4 Page： 572-576 Publication year： Apr. 1998
JST Material Number： L1370A ISSN： 0916-8524 Document type： Article
Article type：原著論文 Country of issue： Japan (JPN) Language： ENGLISH (EN)

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Materials of solid-state devices , Ferroelectrics,antiferroelectrics and ferroelasticity , Semiconductor integrated circuit

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WATANABE, Y. 14th Meet. Ferroelectric Materials and Their Applications. 1997, 75

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