Elimination of SiC/SiO<sub>2</sub> interface states by preoxidation ultraviolet-ozone cleaning.

AFANAS'EV V V; STESMANS A; BASSLER M; PENSL G; SCHULZ M J; HARRIS C I

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J-GLOBAL ID：200902107634395319 Reference number：96A0391003

Elimination of SiC/SiO₂ interface states by preoxidation ultraviolet-ozone cleaning.

予備酸化紫外線-オゾン清浄化によるSiC/SiO₂界面状態の除去

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Volume： 68 Issue： 15 Page： 2141-2143 Publication year： Apr. 08, 1996
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Metal-insulator-semiconductor structures , Surface structure of semiconductors

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Elimination of SiC/SiO2 interface states by preoxidation ultraviolet-ozone cleaning.

Elimination of SiC/SiO₂ interface states by preoxidation ultraviolet-ozone cleaning.