Art
J-GLOBAL ID:200902108123610862   Reference number:94A0925181

Initial stages of InAs epitaxy on vicinal GaAs(001)-(2×4).

微斜面GaAs(001)-(2×4)上のInAsエピタクシーの初期段階
Author (6):
Material:
Volume: 50  Issue: 12  Page: 8479-8487  Publication year: Sep. 15, 1994 
JST Material Number: D0746A  ISSN: 1098-0121  CODEN: PRBMDO  Document type: Article
Article type: 原著論文  Country of issue: United States (USA)  Language: ENGLISH (EN)
Thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
,...
   To see more with JDream III (charged).   {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=94A0925181&from=J-GLOBAL&jstjournalNo=D0746A") }}
JST classification (2):
JST classification
Category name(code) classified by JST.
Semiconductor thin films  ,  Surface structure of semiconductors 
Terms in the title (5):
Terms in the title
Keywords automatically extracted from the title.

Return to Previous Page