Comparison of memory effect between YMnO3 and SrBi2Ta2O9 ferroelectric thin films deposited on Si substrates.

LEE H N; KIM Y T; CHOH S H

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J-GLOBAL ID：200902108485158348 Reference number：00A0307288

Comparison of memory effect between YMnO₃ and SrBi₂Ta₂O₉ ferroelectric thin films deposited on Si substrates.

Si基板上に堆積したYMnO₃とSrBi₂Ta₂O₉強誘電体薄膜とのメモリ効果の比較

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Material：
Volume： 76 Issue： 8 Page： 1066-1068 Publication year： Feb. 21, 2000
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Ferroelectrics,antiferroelectrics and ferroelasticity , Metal-insulator-semiconductor structures , Semiconductor integrated circuit

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