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J-GLOBAL ID:200902108684829065   Reference number:95A0141548

Lattice relaxation of AlGaAs layers grown on GaAs(100) substrate plane by organometallic vapor phase epitaxy.

GaAs(100)基板上に有機金属気相エピタクシーによって成長させたAlGaAs層の格子緩和
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Volume: 77  Issue:Page: 420-422  Publication year: Jan. 01, 1995 
JST Material Number: C0266A  ISSN: 0021-8979  CODEN: JAPIAU  Document type: Article
Article type: 短報  Country of issue: United States (USA)  Language: ENGLISH (EN)
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Semiconductor thin films 
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