Art
J-GLOBAL ID：200902108840547784   Reference number：96A0649274

Hexagonal facet laser grown by selective area epitaxy.

選択成長法により形成した六角柱ファセットレーザー
Author (3)：
ANDO SEIGO

About ANDO SEIGO

(NTT 基礎研)

About NTT 基礎研

, 
KOBAYASHI NAOKI

About KOBAYASHI NAOKI

(NTT 基礎研)

About NTT 基礎研

, 
ANDO HIROAKI

About ANDO HIROAKI

(NTT 基礎研)

About NTT 基礎研


Material：
応用物理  (JSAP International)

About 応用物理


Volume： 65  Issue： 7  Page： 728-731  Publication year： Jul. 1996 
JST Material Number： F0252A  ISSN： 0369-8009  CODEN： OYBSA  Document type： Article
Article type： 解説  Country of issue： Japan (JPN)  Language： JAPANESE (JA)
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AlGaAs laser

About AlGaAs laser

,...
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Thesaurus term/Semi thesaurus term
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MOVPE

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,...
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JST classification (2)：
JST classification
Category name(code) classified by JST.
Semiconductor lasers 
(BD04070L)

About Semiconductor lasers

,  Semiconductor thin films 
(BK14040E)

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Terms in the title (4)：
Terms in the title
Keywords automatically extracted from the title.
選択成長

About 選択成長

, 
六角柱

About 六角柱

, 
ファセット

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, 
レーザー

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