InGaN/GaN/AlGaN-based laser diodes with cleaved facets grown on GaN substrates.

NAKAMURA S; SENOH M; NAGAHAMA S; IWASA N; KIYOKU H; SUGIMOTO Y; KOZAKI T; UMEMOTO H; CHOCHO K

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J-GLOBAL ID：200902108864757275 Reference number：98A0823857

InGaN/GaN/AlGaN-based laser diodes with cleaved facets grown on GaN substrates.

GaN基板上に成長させたへき開端面を有するInGaN/GaN/AlGaNに基づくレーザダイオード

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Material：
Volume： 73 Issue： 6 Page： 832-834 Publication year： Aug. 10, 1998
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Semiconductor lasers

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