Industrial production of GaN and InGaN-light emitting diodes on SiC-substrates.

ZEHNDER U; WEIMAR A; STRAUSS U; FEHRER M; HAHN B; LUGAUER H-J; HAERLE V

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J-GLOBAL ID：200902109354651304 Reference number：01A0760399

Industrial production of GaN and InGaN-light emitting diodes on SiC-substrates.

SiC基板上のGaNおよびInGaN発光ダイオードの工業的製造

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Material：
Volume： 230 Issue： 3/4 Page： 497-502 Publication year： Sep. 2001
JST Material Number： B0942A ISSN： 0022-0248 Document type： Article
Article type：原著論文 Country of issue： Netherlands (NLD) Language： ENGLISH (EN)

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Semiconductor-semiconductor contacts with Gr.13-15 element compounds , Light emitting devices

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