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J-GLOBAL ID:200902109424214578   Reference number:99A1009023

窒素50気圧750°CにおけるNaフラックス法によるGaNバルク単結晶成長

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Material:
Volume: 60th  Issue:Page: 272  Publication year: Sep. 01, 1999 
JST Material Number: Y0055A  Document type: Proceedings
Country of issue: Japan (JPN)  Language: JAPANESE (JA)
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