Effect of electron-hole interaction on electron spin relaxation in GaAs/AlGaAs quantum wells at room temperature.

GOTOH H; ANDO H; SOGAWA T; KAMADA H; KAGAWA T; IWAMURA H

Art

J-GLOBAL ID：200902109571996140 Reference number：00A0437042

Effect of electron-hole interaction on electron spin relaxation in GaAs/AlGaAs quantum wells at room temperature.

室温のGaAs/AlGaAs量子井戸における電子スピン緩和に及ぼす電子-正孔相互作用の効果

Publisher site Copy service {{ this.onShowCLink("http://jdream3.com/copy/?sid=JGLOBAL&noSystem=1&documentNoArray=00A0437042&COPY=1") }}
Access JDreamⅢ for advanced search and analysis. {{ this.onShowJLink("http://jdream3.com/lp/jglobal/index.html?docNo=00A0437042&from=J-GLOBAL&jstjournalNo=C0266A") }}

Author (6)： , , , , ,
Material：
Volume： 87 Issue： 7 Page： 3394-3398 Publication year： Apr. 01, 2000
JST Material Number： C0266A ISSN： 0021-8979 CODEN： JAPIAU Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

,...
,...

To see more with JDream III (charged). {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=00A0437042&from=J-GLOBAL&jstjournalNo=C0266A") }}

Semiconductor-semiconductor contacts with Gr.13-15 element compounds

, , , , , , ,

Return to Previous Page