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J-GLOBAL ID：200902109861941446
Reference number：98A0527409
Wafer Bonding of InP to Si and its Application to Optical Devices.
Si上へのInPのウエハボンディングおよびその光学素子への応用
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Author (2)：
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Material：
Volume：
37
Issue：
3B
Page：
1383-1390
Publication year：
Mar. 1998
JST Material Number：
G0520B
ISSN：
0021-4922
Document type：
Article
Article type：
原著論文
Country of issue：
Japan (JPN)
Language：
ENGLISH (EN)
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JST classification (2)：
JST classification
Category name(code) classified by JST.
Semiconductor lasers
, Manufacturing technology of solid-state devices
Reference (28)：
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1) M. Shimbo, K. Furukawa, K. Fukuda and K. Tanzawa: J. Appl. Phys. 60 (1986) 2987
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2) J. B. Lasky: Appl. Phys. Lett. 48 (1986) 78
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3) Y. H. Lo, R. Bhat, D. M. Hwang, M. A. Koza and T. P. Lee: Appl. Phys. Lett. 58 (1991) 1961
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4) H. Wada, Y. Ogawa and T. Kamijoh: Appl. Phys. Lett. 62 (1993) 738
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5) D. I. Babic, K. Streubel, R. P. Mirin, N. M. Margalit, J. E. Bowers, E. L. Hu, D. E. Mars, L. Yang and K. Carey: IEEE Photon. Technol. Lett. 11 (1995) 1225.
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