Art
J-GLOBAL ID：200902110043938179
Reference number：99A0326724
Fabrication of Nano-Scale Point Contact Metal-Oxide-Semiconductor Field-Effect-Transistors Using Micrometer-Scale Design Rule.
ミクロンメータスケールの設計ルールによるナノスケールの点接触金属-酸化物-半導体電界効果トランジスタの作製
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Author (2)：
,
Material：
Volume：
38
Issue：
1B
Page：
396-398
Publication year：
Jan. 30, 1999
JST Material Number：
G0520B
ISSN：
0021-4922
Document type：
Article
Article type：
原著論文
Country of issue：
Japan (JPN)
Language：
ENGLISH (EN)
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JST classification (2)：
JST classification
Category name(code) classified by JST.
Metal-insulator-semiconductor structures
, Transistors
Reference (8)：
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(1) K. Yano, T. Ishii, T. Hashimoto, T. Kobayashi, F. Murai and K. Seki: IEEE Trans. Electron Devices 41 (1994) 1628.
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(2) H. I. Hanafi, S. Tiwari and I. Khan: IEEE Trans. Electron Devices 43 (1996) 1553.
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(3) A. Fujiwara, Y. Takahashi, K. Yamazaki, H. Namatsu, M. Nagase, K. Kurihara and K. Murase: Tech. Dig. Int. Electron Devices Meet. (1997) p.163.
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(4) L. Zhuang, L. Guo and S. Y. Chou: Appl. Phys. Lett. 72 (1998) 1205.
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(5) T. Hiramoto, H. Ishikuro, T. Fujii, T. Saraya, G. Hashiguchi and T. Ikoma: Physica B 227 (1996) 95.
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