InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm.

USTINOV V M; MALEEV N A; ZHUKOV A E; KOVSH A R; EGOROV A YU; VOLOVIK B V; ALFEROV ZH I; LEDENTSOV N N; BIMBERG D

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J-GLOBAL ID：200902111319862445 Reference number：99A0525625

InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm.

GaAs基板上の1.3μmで発光するInAs/InGaAs量子ドット構造

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Material：
Volume： 74 Issue： 19 Page： 2815-2817 Publication year： May. 10, 1999
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Semiconductor-semiconductor contacts with Gr.13-15 element compounds , Luminescence of semiconductors

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