Effects of Ge on Material and Electrical Properties of Polycrystralline Si<sub>1-x</sub>Ge<sub>x</sub> for Thin-Film Transistors.

TSAI J A; TANG A J; NOGUCHI T; REIF R

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J-GLOBAL ID：200902111395183433 Reference number：95A0906368

Effects of Ge on Material and Electrical Properties of Polycrystralline Si_1-xGe_x for Thin-Film Transistors.

薄膜トランジスタ用多結晶性Si_1-xGe_xの材料および電気特性に対するGeの影響

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Volume： 142 Issue： 9 Page： 3220-3225 Publication year： Sep. 1995
JST Material Number： C0285A ISSN： 1945-7111 CODEN： JESOAN Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

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Semiconductor thin films , Electric conduction in crystalline semiconductors , Nonmetallic compounds

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Effects of Ge on Material and Electrical Properties of Polycrystralline Si1-xGex for Thin-Film Transistors.

Effects of Ge on Material and Electrical Properties of Polycrystralline Si_1-xGe_x for Thin-Film Transistors.