Lowering the Annealing Temperature of Ni/SiC for Ohmic Contacts under N<sub>2</sub> Gas, and Application to a UV Sensor.

TODA T; UEDA Y; SAWADA M

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J-GLOBAL ID：200902112142099203 Reference number：00A0765344

Lowering the Annealing Temperature of Ni/SiC for Ohmic Contacts under N₂ Gas, and Application to a UV Sensor.

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Volume： 338/342 Issue： Pt.2 Page： 989-992 Publication year： 2000
JST Material Number： D0716B ISSN： 0255-5476 Document type： Article
Country of issue： Switzerland (CHE) Language： ENGLISH (EN)

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Lowering the Annealing Temperature of Ni/SiC for Ohmic Contacts under N2 Gas, and Application to a UV Sensor.

Lowering the Annealing Temperature of Ni/SiC for Ohmic Contacts under N₂ Gas, and Application to a UV Sensor.