Art
J-GLOBAL ID:200902112417412136
Reference number:99A0691302
Electoron Beam Irradiation Effect on Epitaxial Growth of CeO2(110) Layers on Si(100) Substrates.
Si(100)基板上のCeO2(110)層のエピタキシャル成長に及ぼす電子ビーム照射効果
Author (1):
Material:
Issue:
12
Page:
18-25
Publication year:
Mar. 22, 1999
JST Material Number:
L0222A
ISSN:
0916-1236
Document type:
Article
Article type:
原著論文
Country of issue:
Japan (JPN)
Language:
ENGLISH (EN)
Thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
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JST classification (2):
JST classification
Category name(code) classified by JST.
Oxide thin films
, Semiconductor thin films
Terms in the title (5):
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