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J-GLOBAL ID:200902112417412136   Reference number:99A0691302

Electoron Beam Irradiation Effect on Epitaxial Growth of CeO2(110) Layers on Si(100) Substrates.

Si(100)基板上のCeO2(110)層のエピタキシャル成長に及ぼす電子ビーム照射効果
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Issue: 12  Page: 18-25  Publication year: Mar. 22, 1999 
JST Material Number: L0222A  ISSN: 0916-1236  Document type: Article
Article type: 原著論文  Country of issue: Japan (JPN)  Language: ENGLISH (EN)
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Oxide thin films  ,  Semiconductor thin films 
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