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J-GLOBAL ID:200902113044303745   Reference number:99A0378583

Change in the Oxidation State of the Adsorbed Oxygen Equilibrated at 25°C on ZnO Surface during Room Temperature Annealing after Rapid Quenching.

高速冷却後の室温での焼鈍中に生じるZnO表面における25°Cで平衡状態にある吸着酸素の酸化状態の変化
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Material:
Volume: 38  Issue: 3A  Page: 1534-1538  Publication year: Mar. 15, 1999 
JST Material Number: G0520B  ISSN: 0021-4922  Document type: Article
Article type: 原著論文  Country of issue: Japan (JPN)  Language: ENGLISH (EN)
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Surface structure of semiconductors  ,  Study of adsorption by physical means 
Reference (15):
  • (1) G. Neumann: Current Topics in Materials Science, ed. E. Kaldis (North-Holland, Amsterdam 1981) Vol. 7, Pt. 1, p.153.
  • (2) S.R. Morrison: Adv. Catal. 7 (1955) 259.
  • (3) W. Gopel: J. Vac. Sci. Technol. 15 (1978) 1298.
  • (4) M. Takata and H. Yanagida: Yogyo Kyokaishi 87 (1979) 19 [in Japanese].
  • (5) N.M. Beekmans: J. Chem. Soc. Faraday Trans. 1 74 (1978) 31.
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