Effects of Si-doping in the barriers of InGaN multiquantum well purplish-blue laser diodes.

CHICHIBU S; COHEN D A; MACK M P; ABARE A C; KOZODOY P; MINSKY M; FLEISCHER S; KELLER S; DENBAARS S P

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J-GLOBAL ID：200902114212387565 Reference number：98A0745881

Effects of Si-doping in the barriers of InGaN multiquantum well purplish-blue laser diodes.

InGaN多重量子井戸青紫色レーザダイオードの障壁におけるSiドーピングの効果

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Author (9)： , , , , , , , ,
Material：
Volume： 73 Issue： 4 Page： 496-498 Publication year： Jul. 27, 1998
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Semiconductor lasers

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