Art
J-GLOBAL ID：200902116235036770
Reference number：98A0604793
Fabrication Procedures and Characteristics of 6H-SiC Au-gate Metal-Semiconductor Field-Effect Transistor for Use at High Temperatures.
高温で使うための6H-SiCのAuゲート金属-半導体電界効果トランジスタの作製過程と特性
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Author (3)：
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Material：
Volume：
37
Issue：
4A
Page：
1817-1818
Publication year：
Apr. 1998
JST Material Number：
G0520B
ISSN：
0021-4922
Document type：
Article
Article type：
短報
Country of issue：
Japan (JPN)
Language：
ENGLISH (EN)
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JST classification (2)：
JST classification
Category name(code) classified by JST.
Semiconductor-metal contacts
, Transistors
Reference (6)：
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SHIN, M. W. IEEE/Cornell Conf. 1993, 421
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MOORE, K. E. IEEE Electron Device Lett. 1997, 18, 68
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CUSACK, D. E. Proc.2nd Int.High Temp.Electron.Conf. 1994, III.17
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KUPHAL, E. Solid State Electron. 1981, 24, 69
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TODA, T. Ext.Abstr.Japan Society of Applied Physics. 1997, 29a-SS-30
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