Art
J-GLOBAL ID:200902116426847647   Reference number:02A0106728

A High-Power GaN-Based Field-Effect Transistor for Large-Current Operation.

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Material:
Volume: 188  Issue:Page: 243-246  Publication year: Nov. 16, 2001 
JST Material Number: D0774A  ISSN: 0031-8965  Document type: Article
Country of issue: Germany, Federal Republic of (DEU)  Language: ENGLISH (EN)
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