Art

J-GLOBAL ID：200902116850099103   Reference number：01A0700082

Influence of Organic Contaminant on Breakdown Characteristics of MOS Capacitors with Thin SiO₂.

薄いSiO₂を有するMOSキャパシタの絶縁破壊特性に及ぼす有機汚染物の影響

Author (4)： YOSHINO T (Hiroshima Univ., Higashi-Hiroshima, JPN) ,  YOKOYAMA S (Hiroshima Univ., Higashi-Hiroshima, JPN) ,  SUZUKI T (EBARA Co., Ltd., Fujisawa, JPN) ,  FUJII T (EBARA Co., Ltd., Fujisawa, JPN)
Material： Japanese Journal of Applied Physics. Part 1. Regular Papers, Short Notes & Review Papers  (Japanese Journal of Applied Physics. Part 1. Regular Papers, Brief Communications & Review Papers)
Volume： 40  Issue： 4B  Page： 2849-2853  Publication year： Apr. 30, 2001 
JST Material Number： G0520B  ISSN： 0021-4922  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： dielectric thin film ,...

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JST classification (2)： Measurement,testing and reliability of solid-state devices  (NC03040G) ,  Metal-insulator-semiconductor structures  (BM03085X)

Reference (15)：

• 1) K. Saga and T. Hattori: J. Electrochem. Soc. 144 (1997) L253.
• 2) 2nd Lecture of Japan 300 mm Semiconductor Technology Conference, ICs Factory Design for 300 mm Wafer Line Standardizing Study, Electronic Industries Association of Japan (1996).
• 3) T. Seto, K. Okuyama, Y. Inoue, S. Yokoyama, S. Kurose, M. Hirose and T. Fujii: Rev. Sci. Instrum. 66 (1995) 5348.
• 4) H. Tobimatsu, Y. Inoue, T. Seto, K. Okuyama, T. Fujii, K. Shibahara, S. Yokoyama and M. Hirose: IEEE Trans. Semiconductor Manuf. 11 (1998) 9.
• 5) S. Yokoyama, Y. Hara, T. Yoshino, T. Suzuki, T. Fujii and K. Ohyama: Proc. Int. Symp. Semicond. Manuf., Santa Clala (Institute of Electrical and Electronics Engineers, New York, 1999) 169.

Terms in the title (5)： SiO2 ,  MOSキャパシタ ,  絶縁 ,  破壊特性 ,  汚染物