Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy.

NAM O-H; BREMSER M D; ZHELEVA T S; DAVIS R F

Art

J-GLOBAL ID：200902117366591008 Reference number：98A0023757

Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy.

有機金属気相エピタクシーによる低欠陥密度のGaNの横方向エピタクシー

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Author (4)： , , ,
Material：
Volume： 71 Issue： 18 Page： 2638-2640 Publication year： Nov. 03, 1997
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Semiconductor thin films

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