Growth and characterization of codoping of ZnSe:Cl with Li grown by molecular beam epitaxy on GaAs.

YONETA M; UECHI H; NANAMI K; OHISHI M; SAITO H; YOSHINO K; OHMORI K

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J-GLOBAL ID：200902117672573544 Reference number：01A0686450

Growth and characterization of codoping of ZnSe:Cl with Li grown by molecular beam epitaxy on GaAs.

GaAs上に分子ビームエピタクシーで成長させたZnSe:(Cl,Li)のコドーピングに関する成長および特性評価

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Material：
Volume： 302/303 Page： 166-171 Publication year： Aug. 2001
JST Material Number： H0676B ISSN： 0921-4526 Document type： Article
Article type：原著論文 Country of issue： Netherlands (NLD) Language： ENGLISH (EN)

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Lattice defects in semiconductors , Electric conduction in crystalline semiconductors

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