Multicomponent Zone Melting Growth of Ternary InGaAs Bulk Crystal.

SUZUKI T; NAKAJIMA K; KUSUNOKI T; KATOH T

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J-GLOBAL ID：200902118786676978 Reference number：96A0347292

Multicomponent Zone Melting Growth of Ternary InGaAs Bulk Crystal.

三元InGaAsバルク結晶の多成分帯域溶融成長

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Material：
Volume： 25 Issue： 3 Page： 357-361 Publication year： Mar. 1996
JST Material Number： D0277B ISSN： 0361-5235 Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

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Crystal growth of semiconductors

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