Atomic-layer-deposited silicon-nitride/SiO<sub>2</sub> stacked gate dielectrics for highly reliable p-metal-oxide-semiconductor field-effect transistors.

NAKAJIMA A; YOSHIMOTO T; KIDERA T; OBATA K; YOKOYAMA S; SUNAMI H; HIROSE M

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J-GLOBAL ID：200902119138945633 Reference number：01A0016988

Atomic-layer-deposited silicon-nitride/SiO₂ stacked gate dielectrics for highly reliable p-metal-oxide-semiconductor field-effect transistors.

高信頼性p-金属-酸化物-半導体電界効果トランジスタ用の原子層堆積窒化けい素/SiO₂積層ゲート誘電体

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Author (7)： , , , , , ,
Material：
Volume： 77 Issue： 18 Page： 2855-2857 Publication year： Oct. 30, 2000
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Metal-insulator-semiconductor structures , Transistors

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Atomic-layer-deposited silicon-nitride/SiO2 stacked gate dielectrics for highly reliable p-metal-oxide-semiconductor field-effect transistors.

Atomic-layer-deposited silicon-nitride/SiO₂ stacked gate dielectrics for highly reliable p-metal-oxide-semiconductor field-effect transistors.